t4 - lds - 0239, rev . 1 (1 12021 ) ?2011 microsemi corporation page 1 of 3 1n4149 -1 ,51 -1 ,54 -1 & 1n4446 - 1 C 1n4449 -1 available computer switching diode screening in reference to mil - prf - 19500 available description these popular 1n4149, 1n4151, 1n41 54 and 1n4446 C 1n4449 series of jedec regi stered switching/signal diodes are available with internal metallurgical bonded constr uction . these small low capacitance diodes , with very fast switching speeds , are hermetically sealed and bonded into a double - plug do - 35 package. they may be used in a variety of fast switching applications including computers and peripheral equipment such as magnetic cores, thin - film memories, plated - wire memories, as well as decoding or encoding applications, etc. microsemi also offers a variety of other switching/signal diodes. do - 35 (do - 204ah) package important: for the latest information, visit our website http://www.microsemi.com . features ? popular jedec registered 1n4149, 51, 54 and 1n4446 C 4 9 series. ? hermetically sealed glass construction . ? m etallurgical ly bond ed . ? double plug construction. ? very low capacitance . ? very fast switching speeds with minimal reverse recovery times . ? s creening available in reference to mil - prf - 19500 . (s ee part nomenclature for all available options .) ? rohs compliant versions available . applications / benefits ? high frequency data lines. ? small size for high density mounting using flexible thru - hole leads (see package illustration) . ? rs - 232 & rs C 422 i nterface n etworks. ? ethernet 10 base t. ? switching core drivers. ? lan. ? computers. maximum ratings @ 25 oc msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or ( 978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction t j - 65 to +15 0 o c storage temperature t stg - 65 to +200 o c reverse voltage, maximum (peak) total value 1n4154: 1n4149, 1n4151 , 1n4446, 1n4447, 1n4448, 1n4449: v rm 35 75 v average rectified current i o 200 ma non - repetitive sinusoidal surge current (8.3 ms) i fsm 500 ma downloaded from: http:///
t4 - lds - 0239, rev . 1 (1 12021 ) ?2011 microsemi corporation page 2 of 3 1n4149 -1 ,51 -1 ,54 -1 & 1n4446 - 1 C 1n4449 -1 mechanical and packaging ? case: hermetically sealed glass package. ? terminals: t in /l ead plated or rohs compliant m atte -t in over copper clad steel solderable per mil - std - 750, method 2026. ? polar ity: cathode indicated by band. ? marking: part number. ? tape & ree l option: standard per eia - 296. consult factory for quantities. ? weight: 0.2 grams. ? see p ackage di mensions on last page. part nomenclature mq 1n4149 -1 (e3) reliability level mq (reference jan) mx (reference jantx ) mv (reference jantxv) msp (reference jans) blank = c ommercial grade je dec type number (s ee e lectrical characteristic s t able ) rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant metallurgical ly bond ed symbols & definitions symbol definition i r reverse current: the maximum reverse (leakage) current that will flow at the specified voltage and temperature. i o average rectified forward current: the o utput c urrent averaged over a full cycle with a 50 hz or 60 hz sine - wave input and a 180 degree conduction angle. t rr reverse recovery time: the time interval between the instant the current passes through zer o when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse cur rent occurs. v f forward voltage: the forward voltage the device will exhibit at a specified current (typic ally shown as maximum value). v r reverse voltage: the reverse voltage dc value, no alternating component. v rwm working peak reverse voltage: the maximum peak voltage that can be applied over the operating t emperature range excluding all transient voltages (ref jesd282 - b). also sometimes known as piv. electrical characteristics @ 25 oc unless otherwise noted type working peak reverse voltage v rwm forward voltage v f reverse current i r @ v r reverse current @ 150 o c i r @ v r junction capacitance c j @ 0 v reverse recovery time t rr @ 10 ma @ 20 ma @ 30 ma @ 50 ma @ 100 ma v na v a 1n4149 -1 75 1.0 - - - - 20 25 20 50 4 pf 4 ns 1n4151 -1 75 - - - 1.0 - 50 50 50 50 4 pf 2 ns 1n4154 -1 35 - - 1.0 - - 25 100 25 100 4 pf 2 ns 1n4446 -1 75 - 1.0 - - - 20 25 20 50 4 pf 4 ns 1n4447 -1 75 - 1.0 - - - 20 25 20 50 4 pf 4 ns 1n4448 -1 75 - - - - 1.0 20 25 20 50 4 pf 4 ns 1n4449 -1 75 - - 1.0 - - 20 25 20 50 2 pf 4 ns downloaded from: http:///
t4 - lds - 0239, rev . 1 (1 12021 ) ?2011 microsemi corporation page 3 of 3 1n4149 -1 ,51 -1 ,54 -1 & 1n4446 - 1 C 1n4449 -1 package dimensions ltr d imensions notes inch m illimeters min max min max bd .055 .090 1.40 2.29 3 bl .120 .200 3.05 5.08 3 ld .018 .022 0.46 0.56 ll 1.000 1.500 25.40 38.10 ll 1 .050 1.27 4 no tes: 1 . d imension s ar e in inch. 2 . m illimete rs ar e gi ven fo r genera l informatio n onl y. 3 . packag e contou r optiona l w ithi n b d an d lengt h bl . h ea t slugs , if an y , shal l be include d w ithi n thi s cy linde r bu t shal l no t be subjec t to minimum limi t of b d. the bl dimensio n shal l includ e th e entir e bod y including slugs. 4 . w ithi n thi s z on e lead , diamete r may v ar y to allo w fo r lea d finishe s and irregularitie s othe r tha n hea t slugs. 5 . in accordanc e w it h asme y 14.5 m, diameter s ar e equi v alen t to x sy mbolog y. downloaded from: http:///
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